计算物理 ›› 2003, Vol. 20 ›› Issue (5): 467-470.
• 论文 • 上一篇
王源, 张义门, 张玉明
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作者简介:
WANG Yuan, ZHANG Yi-men, ZHANG Yu-ming
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摘要： 提出了一种功率AlGaAs/GaAs HBT的自加热温度模型,讨论了在大电流条件下,器件晶格温度升高和基区扩展效应对HBT器件频率特性的影响,并对器件的晶格温度、截止频率和最高振荡频率在自加热条件下的变化分别进行了计算和模拟.
关键词: HBT, 自加热, 频率特性
Abstract: A self-heating model is presented to predict the high-frequency performance of AlGaAs/GaAs heterojunction bipolar transistors (HBT's) including high current and thermal effects. A base pushout effect is discussed at high current region. And in this case, the lattice temperature, the cut-off frequency and the maximum frequency versus the collector current density are achieved.
Key words: HBT, self-heating model, high frequency performance
中图分类号:
TN325.3
王源, 张义门, 张玉明. 功率AlGaAs/GaAs HBT自加热频率特性[J]. 计算物理, 2003, 20(5): 467-470.
WANG Yuan, ZHANG Yi-men, ZHANG Yu-ming. High-frequency Performance Including Self-heating Effect for AlGaAs/GaAs Power HBT's[J]. CHINESE JOURNAL OF COMPUTATIONAL PHYSICS, 2003, 20(5): 467-470.
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http://www.cjcp.org.cn/CN/Y2003/V20/I5/467
