功率GaAs MESFET小信号模型参数的提取

计算物理 ›› 2002, Vol. 19 ›› Issue (2): 127-131.

功率GaAs MESFET小信号模型参数的提取

吴龙胜, 刘佑宝

西安微电子技术研究, 陕西西安 710054

收稿日期:2000-07-24 修回日期:2001-02-06 出版日期:2002-03-25 发布日期:2002-03-25
作者简介:吴龙胜(1958-), male, Zongyang, Anhui, Ph.D, senior engineer, specialized in mierowave IC design model hulding.

SMALL-SIGNAL MODEL PARAMETER EXTRACTION FOR POWER GaAs MESFET's

WU Long-sheng, LIU You-bao

Xi'an Microelectronics Technology Institute, Xi'an 710054, P R China

Received:2000-07-24 Revised:2001-02-06 Online:2002-03-25 Published:2002-03-25

摘要/Abstract

摘要： 采用非本征元件的参数作为本征元件参数函数的自变量的方法,求解MESFET小信号等效电路模型,并采用相对误差来构建目标函数.以FET在零偏置状态的非本征元件值作为初值,通过优化求得了热FET状态的本征元件值,S参数的计算值与实验值吻合得很好,S₁₁的相对误差为009%,S₁₂为1.1%,S₂₁为0.08%,S₂₂为2.26%.该方法收敛快,精度高并且效率高,便于移植到微波器件CAD设计和模拟软件中.

关键词: small-signal, objective function, initial value

Abstract: The intrinsic elements are described as functions of the extrinsic parameters.Those relative errors of intrinsic elements are proposed as objective functions.Extrinsic element values of FET's at unbiased state are used as the initial values of the independent variables.Then the intrinsic element values of ‘hot’ FET's are extracted with the optimization method.The results show that the relative errors of S-parameters are 0.09% for S₁₁,1.1% for S₁₂,0.08% for S₂₁,2.26% for S₂₂,respectively.The key properties of the method are fast convergence,high precision and efficiency.It is easy to transplant the optimization method into microwave CAD tools for circuit design and simulation.

Key words: small-signal, objective function, initial value

中图分类号:

TN702

吴龙胜, 刘佑宝. 功率GaAs MESFET小信号模型参数的提取[J]. 计算物理, 2002, 19(2): 127-131.

WU Long-sheng, LIU You-bao. SMALL-SIGNAL MODEL PARAMETER EXTRACTION FOR POWER GaAs MESFET's[J]. CHINESE JOURNAL OF COMPUTATIONAL PHYSICS, 2002, 19(2): 127-131.