双磁垒中电子的隧穿效应

计算物理 ›› 2002, Vol. 19 ›› Issue (3): 245-248.

双磁垒中电子的隧穿效应

曾以成

浙江大学生物医学工程系, 浙江杭州 310027

收稿日期:1999-09-06 修回日期:2001-11-04 出版日期:2002-05-25 发布日期:2002-05-25
作者简介:曾以成(1962-),男,湖南,副教授,博士生,从事非线性动力学与生物信息处理等方面的研究.

ELECTRONIC TUNNELING EFFECT THROUGH DOUBLE MAGNETIC BARRIERS

ZENG Yi-cheng

Department of Biomedical Engineering, Zhejiang University, Hangzhou 310027, P R China

Received:1999-09-06 Revised:2001-11-04 Online:2002-05-25 Published:2002-05-25

摘要/Abstract

摘要： 采用平面波近似数值方法解非均匀磁场中电子的薛定谔方程,计算了在半导体异质结上沉积带状导电薄膜(通有电流)或I型超导材料产生的两种类型的双磁垒体系的电子隧道结构,以及相应的弹射(ballistic)电导,得知这两种体系的电子隧穿情形差异较大,而它们的电导结构却很相似.

关键词: 磁垒, 隧穿效应, 弹射电导

Abstract: SchrÖidinger Equation of an electron in nonhomogeneous magnetic fields is solved by numerical methods with plane wave approximation. The electronic tunneling and the corresponding ballistic conductance of two double-magnetic-barrier systems created by the lithographic patterning of conducting stripes (drive current) or type Ⅰ superconducting films interrupted by stripes are studied. The results show that the tunneling structures in different systems are dissimilar but the ballistic conductances are strikingly similar.

Key words: magnetic barrier, tunneling effect, ballistic conductance

中图分类号:

曾以成. 双磁垒中电子的隧穿效应[J]. 计算物理, 2002, 19(3): 245-248.

ZENG Yi-cheng. ELECTRONIC TUNNELING EFFECT THROUGH DOUBLE MAGNETIC BARRIERS[J]. CHINESE JOURNAL OF COMPUTATIONAL PHYSICS, 2002, 19(3): 245-248.