半导体器件蒙特卡罗模拟中保持电荷守恒的统计增强方法

计算物理 ›› 2001, Vol. 18 ›› Issue (6): 497-500.

半导体器件蒙特卡罗模拟中保持电荷守恒的统计增强方法

杜刚, 刘晓彦, 孙雷, 韩汝琦

北京大学微电子所, 北京 100871

收稿日期:2001-02-05 修回日期:2001-05-21 出版日期:2001-11-25 发布日期:2001-11-25
作者简介:杜刚(1975-),男,四川攀枝花,博士生,从事半导体新结构新器件模型和模拟研究.
基金资助:
国家重点基础研究专项经费(G20000356)资助项目

A CHARGE CONSERVATION STATISTICS ENHANCEMENT METHOD USED IN SEMICONDUCTOR DEVICE MONTE CARLO SIMULATION

DU Gang, LIU Xiao-yan, SUN Lei, HAN Ru-qi

Institute of Microelectronics, Peking University, Beijing 100871, P R China

Received:2001-02-05 Revised:2001-05-21 Online:2001-11-25 Published:2001-11-25

摘要/Abstract

摘要： 介绍了一种在半导体器件蒙特卡罗模拟中保持电荷守恒的统计增强方法,该方法消除了由统计增强引入的电荷统计涨落,保持了不同增强区界面处过界粒子流的连续性.以肖特基势垒二极管为例,应用该方法,实现了高接触势垒情形下的正反向电流模拟.

关键词: 蒙特卡罗器件模拟, 统计增强方法, 肖特基势垒

Abstract: A charge conservation statistics enhancement method used in semiconductor divice Monte Carlo simulation is approached,which smoothes the charge fluctuation caused by the statistics enhancement, and keeps the continuation of cross edge charge flow. As an example, Schottky barrier diode characteristics is simulated using this method.

Key words: Monte Carlo device simulation, statistics enhancement method, Schottky barrier

中图分类号:

TN303

杜刚, 刘晓彦, 孙雷, 韩汝琦. 半导体器件蒙特卡罗模拟中保持电荷守恒的统计增强方法[J]. 计算物理, 2001, 18(6): 497-500.

DU Gang, LIU Xiao-yan, SUN Lei, HAN Ru-qi. A CHARGE CONSERVATION STATISTICS ENHANCEMENT METHOD USED IN SEMICONDUCTOR DEVICE MONTE CARLO SIMULATION[J]. CHINESE JOURNAL OF COMPUTATIONAL PHYSICS, 2001, 18(6): 497-500.