中子引起单粒子翻转过程的Monte Carlo计算模拟

计算物理 ›› 1999, Vol. 16 ›› Issue (5): 467-473.

中子引起单粒子翻转过程的Monte Carlo计算模拟

李华

西北核技术研究所, 西安 710024

收稿日期:1998-07-20 修回日期:1999-02-02 出版日期:1999-09-25 发布日期:1999-09-25
作者简介:李华,女,35,副研究员,博士,西安69号信箱16分箱

Monte carlo simulation of the process of single event upset induced by neutrons

Li Hua

Northwest Institute of Nuclear Technology, Xi'an, 710024

Received:1998-07-20 Revised:1999-02-02 Online:1999-09-25 Published:1999-09-25

摘要/Abstract

摘要： 从中子与硅原子相互作用的物理机理出发,利用Monte Carlo方法编制了中子引起单粒子翻转的计算模拟程序,并对14 MeV中子环境下的16K位静态存储器硅片翻转过程中的物理量进行了计算,同时可为中子引起的单粒子翻转的研究提供截面和描述内部物理过程的参考数据。

关键词: 单粒子翻转, MonteCarlo模拟, 计算模拟程序

Abstract: Based on physical mechanism of the interaction between incident neutrons and silicon atoms, a simulation program of Single Event Upset (SEU) induced by neutrons is compiled by Monte Carlo method. The process of SEU of a 16 K static access memory silicon chip induced by 14 MeV incident neutrons has been simulated by the program. The simulation results show that the program can provide a detailed description of the physical process of SEU of a silicon chip and can produce reference data about SEU cross section in a 14 MeV neutrons evironment.

Key words: Single Event Upset, Monte Carlo simulation, calculation program

中图分类号:

李华. 中子引起单粒子翻转过程的Monte Carlo计算模拟[J]. 计算物理, 1999, 16(5): 467-473.

Li Hua. Monte carlo simulation of the process of single event upset induced by neutrons[J]. CHINESE JOURNAL OF COMPUTATIONAL PHYSICS, 1999, 16(5): 467-473.

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