表面势垒对梯度掺杂GaN光电阴极电子逸出几率的影响

计算物理 ›› 2013, Vol. 30 ›› Issue (5): 739-744.

表面势垒对梯度掺杂GaN光电阴极电子逸出几率的影响

王洪刚^1,2, 钱芸生¹, 杜玉杰¹, 任玲¹, 徐源¹

1. 南京理工大学电子工程与光电技术学院, 江苏南京 210094;
2. 鲁东大学信息与电气工程学院, 山东烟台 264025

收稿日期:2012-12-11 修回日期:2013-04-07 出版日期:2013-09-25 发布日期:2013-09-25
通讯作者: 钱芸生,E-mail:yshqian@mail.njust.edu.cn
作者简介:王洪刚(1976-),男,博士生,讲师,主要从事光电发射理论与测试技术研究,E-mail:whgwwl@163.com
基金资助:
国家自然科学基金(61171042)资助项目

Influence of Surface Barrier on Electron Escape Probability of Gradient-doping GaN Photocathode

WANG Honggang^1,2, QIAN Yunsheng¹, DU Yujie¹, REN Ling¹, XU Yuan¹

1. Institute of Electronic Engineering and Optoelectronic Technology, Nanjing University of Science and Technology, Nanjing 210094, China;
2. School of Information and Electrical Engineering, Ludong University, Yantai 264025, China

Received:2012-12-11 Revised:2013-04-07 Online:2013-09-25 Published:2013-09-25

摘要/Abstract

摘要： 研究表面势垒对梯度掺杂GaN光电阴极电子逸出几率的影响.计算梯度掺杂透射式GaN光电阴极的电子能量分布及逸出几率,结果显示梯度掺杂与均匀掺杂相比,可以获得更大的电子逸出几率;I势垒对电子逸出几率的影响显著,而Ⅱ势垒影响较小.利用GaN光电阴极多信息量测试系统,测试两种GaN阴极样品的光电流.实验结果表明,梯度掺杂GaN样品比均匀掺杂电子逸出几率更大;单独进行Cs激活形成的I势垒对电子逸出几率有显著影响,而Cs/O共同激活形成的Ⅱ势垒对其影响较小.

关键词: 表面势垒, 梯度掺杂, NEA GaN光电阴极, 电子逸出几率

Abstract: Influence of surface potential barrier on escape probability of gradient-doping negative electron affinity (NEA) GaN photocathode was studied. Electron energy distribution and escape probability are calculated and compared with those of uniform-doping GaN photocathode. It shows that gradient-doping NEA GaN photocathode can obtain higher electron escape probability. And barrier I has an evident influence on escape probability while barrier Ⅱ has limited influence. Photocurrents of two GaN photocathodes are measured with a multi-information-test system. Experimental results show that gradient-doping GaN photocathode has higher escape probability. Obvious effect on escape probability can be found by barrier I from Cs-activation while barrier Ⅱ from Cs/O-joint-activation has little impact.

Key words: surface barrier, gradient-doping, NEA GaN photocathode, electron escape probability

中图分类号:

O462.3

王洪刚, 钱芸生, 杜玉杰, 任玲, 徐源. 表面势垒对梯度掺杂GaN光电阴极电子逸出几率的影响[J]. 计算物理, 2013, 30(5): 739-744.

WANG Honggang, QIAN Yunsheng, DU Yujie, REN Ling, XU Yuan. Influence of Surface Barrier on Electron Escape Probability of Gradient-doping GaN Photocathode[J]. CHINESE JOURNAL OF COMPUTATIONAL PHYSICS, 2013, 30(5): 739-744.