计算物理 ›› 2013, Vol. 30 ›› Issue (6): 943-948.

• 论文 • 上一篇    

硅纳米结点电子输运性质的计算

柳福提1,2, 程艳2, 羊富彬2, 程晓洪1, 陈向荣2   

  1. 1. 宜宾学院物理与电子工程学院, 四川 宜宾 644000;
    2. 四川大学物理科学与技术学院, 四川 成都 610065
  • 收稿日期:2013-01-06 修回日期:2013-05-26 出版日期:2013-11-25 发布日期:2013-11-25
  • 通讯作者: 程艳,E-mail:ycheng@scu.edu.cn
  • 作者简介:柳福提(1978-),男,博士研究生,副教授,主要从事介观系统的电子输运研究,E-mail:futiliu@163.com
  • 基金资助:
    国家自然科学基金(11174214,11204192);四川省教育厅科研项目(13ZB0207)资助项目

Electron Transport in Silicon Nanoscale Junctions

LIU Futi1,2, CHENG Yan2, YANG Fubin2, CHENG Xiaohong1, CHEN Xlangrong2   

  1. 1. College of Physics and Electronic Engineering, Yibin University, Yibin 644000, China;
    2. College of Physical Science and Technology, Sichuan University, Chengdu 610064, China
  • Received:2013-01-06 Revised:2013-05-26 Online:2013-11-25 Published:2013-11-25

摘要: 运用第一性原理密度泛函理论结合非平衡格林函数方法,对3个Si原子构成的直线链耦合在Au(100)面形成的三明治结构的纳米结点的电子输运进行计算.结果得到结点电导随距离的变化,当dz=1.584 nm时,结合能最小,结构最稳定,此时Si-Si键长为0.216 nm,Si-Au键长为0.227 nm,电导为0.729 G0(G0=2e2/h),其电子传输通道主要由Si原子的pxpy轨道电子构成;随着外电压的增大,结点的电导减小,而其I-V曲线表现出线性特征.

关键词: 密度泛函理论, 非平衡格林函数, 硅纳米结点, 电子输运

Abstract: Electron transport in a linear atomic chain composed of 3 silicon atoms and sandwiched between gold electrodes is investigated with combination of density functional theory and non-equilibrium Green's function method. Relationship of conductance with distance is calculated. It shows that:At a distance of 1.584 nm, binding energy of junctions is minimum, structure is the most stable, Si-Si bond length is 0.216 nm, Si-Au bond length is 0.227 nm, conductance is 0.729 G0(G0=2e2/h), electron transport channels mainly consist of px, py orbital electrons of Si atoms. With increase of voltage conductance decreases and I-V curve of nanoscale junctions at equilibrium position shows linear feature.

Key words: density functional theory, non-equilibrium green function, silicon nanoscale junctions, electron transport

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