计算物理 ›› 2021, Vol. 38 ›› Issue (2): 199-205.DOI: 10.19596/j.cnki.1001-246x.8234

• 研究论文 • 上一篇    下一篇

电流驱动凹槽磁纳米带内斯格明子的移动特性

张光富1,2, 张赛文1, 邓杨保1, 熊翠秀1, 谭伟石1,2   

  1. 1. 湖南城市学院信息与电子工程学院, 湖南 益阳 413000;
    2. 全固态储能材料与器件湖南省重点实验室, 湖南 益阳 413000
  • 收稿日期:2020-05-28 修回日期:2020-09-30 发布日期:2021-09-29
  • 作者简介:张光富(1981-),男,副教授,博士,主要从事磁纳米结构材料性能研究,E-mail:zhanggf@csu.edu.cn
  • 基金资助:
    国家自然科学基金(11604091,11547186,11947088)、湖南省自然科学基金(2018JJ2019)、湖南省教育厅优秀青年项目(16B048,19B100)资助

Current-induced Skyrmion Motion in Magnetic Fluted Nanostripes

ZHANG Guangfu1,2, ZHANG Saiwen1, DENG Yangbao1, XIONG Cuixiu1, TAN Weishi1,2   

  1. 1. School of information and Electronic Engineering, Hunan City University, Yiyang, Hunan 413000, China;
    2. All-Solid-State Energy Storage Materials and Devices Key Laboratory of Hunan Province, Yiyang, Hunan 413000, China
  • Received:2020-05-28 Revised:2020-09-30 Published:2021-09-29

摘要: 基于微磁学理论和模拟研究电流驱动的斯格明子的移动特性。相对于纳米带,凹槽纳米带可提供更大的边缘排斥力抑制斯格明子横向移动,最大驱动电流(Jmax)和最大斯格明子移动速度(Vmax)显著增加。随着注入电流密度的增加,凹槽纳米带内斯格明子移动速度先增加到最大速度,而后减小或保持不变。通过增加边缘宽度或厚度,JmaxVmax线性增加。研究凹槽纳米带边缘厚度与宽度对斯格明子移动的调制规律,并基于微磁学理论对其进行解释。为基于纳米带结构的自旋电子器件的开发提供理论依据。

关键词: 磁纳米带, 斯格明子, 微磁学模拟, 自旋转移力矩

Abstract: Current-induced skyrmion motion is studied with theory and simulation of micromagnetism. Compared with those in the nanostripe, the maximum driving current density (Jmax) and the maximum skyrmion speed (Vmax) increase significantly in a fluted nanostripe structure which provides greater skyrmion-edge repulsion force to suppress transverse displacement of the skyrmion. As the driving current density increases, the skyrmion speed increases to Vmax, and then decreases or remains unchanged. As increasing the edge width or thickness, Jmax and Vmax increase linearly. We show dependence of the skyrmion speed on edge thickness and width in the fluted nanostripe and explain theoretically with micromagnetics. It provides guidance for the design and development of spintronic devices based on nanostripes.

Key words: magnetic nanostripe, skyrmion, micromagnetic simulation, spin transfer torque

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