双外延基区4H-SiC BJTs的建模与仿真

计算物理 ›› 2010, Vol. 27 ›› Issue (5): 771-778.

双外延基区4H-SiC BJTs的建模与仿真

张倩, 张玉明, 张义门

西安电子科技大学微电子学院, 宽禁带半导体材料与器件重点实验室, 陕西西安 710071

收稿日期:2009-05-19 修回日期:2009-10-27 出版日期:2010-09-25 发布日期:2010-09-25
作者简介:张倩(1982-),female,Shannxi,Ph.D.focusing on modeling and charactering of power bipolar transistors based on 4H-Sir.
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No.60876061); Pre-research Project(Project No.51308040302)

Modeling and Simulation of Double Base Epilayer 4H-SiC BJTs

ZHANG Qian, ZHANG Yuming, ZHANG Yimen

School of Microelectronics, Xidian University, Key Laboratory of Semiconductor Wide Band-Gap Materials and Devices, Xi'an 710071, China

Received:2009-05-19 Revised:2009-10-27 Online:2010-09-25 Published:2010-09-25
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No.60876061); Pre-research Project(Project No.51308040302)

摘要/Abstract

摘要： 基于4H-SiC的材料特性,对具有双外延基区结构的4H-SiC双极晶体管进行研究.通过分析该结构在基区内部形成的自建电场以及基区渡越时间,利用正交试验的方法,基于各种器件二维模型,对该器件结构进行数值计算,并进行平均极差分析.计算结果表明,该器件的共发射结电流增益最高可达72,具有负温度系数,并且在一个很宽的集电极电流范围内该特性保持不变.

关键词: H-SiC, 双极晶体管, 基区自建电场, 基区渡越时间

Abstract: With characteristics of 4H-SiC,a double base epilayer 4H-SiC bipolar junction transistors(BJTs) is investigated.By analyzing build-in electric field in the base region and the base transit time,the device is numerically calculated in two-dimensional models according to orthogonal experiments.A mean range analysis is made to find optimized structure of 4H-SiC BJTs.It shows that common emitter current gain with negative temperature coefficient is about 72 and it remains high in a wide range of collector current.

Key words: H-SiC, bipolar junction transistors, build-in electric field, base transit time

中图分类号:

张倩, 张玉明, 张义门. 双外延基区4H-SiC BJTs的建模与仿真[J]. 计算物理, 2010, 27(5): 771-778.

ZHANG Qian, ZHANG Yuming, ZHANG Yimen. Modeling and Simulation of Double Base Epilayer 4H-SiC BJTs[J]. CHINESE JOURNAL OF COMPUTATIONAL PHYSICS, 2010, 27(5): 771-778.

[1]	游娜, 张现军. 双沟4H-SiC MESFET优化结构的解析模型及性能[J]. 计算物理, 2014, 31(1): 103-108.
[2]	张发生, 张玉明. 结终端采用JTE保护技术的4H-SiC PiN二极管模拟和研制[J]. 计算物理, 2011, 28(2): 306-312.