A General-purpose Two-dimensional Semiconductor Simulator

CHINESE JOURNAL OF COMPUTATIONAL PHYSICS ›› 2007, Vol. 24 ›› Issue (2): 247-252.

A General-purpose Two-dimensional Semiconductor Simulator

GONG Ding¹, WANG Jianguo^1,2, ZHANG Dianhui¹, ZHANG Xianghua¹, HAN Feng¹, TONG Changjiang¹, ZHANG Maoyu¹

1. Northwest Institute of Nuclear Technology, Xi'an 710024, China;
2. School of Electronic and Inform. Eng., Xi'an Jiaotong University, Xi'an 710049, China

Received:2005-12-01 Revised:2006-05-09 Online:2007-03-25 Published:2007-03-25

Abstract

Abstract: We develop a general-purpose two-dimensional semiconductor simulator (GSS),by which the drift-diffusion model and hydrodynamic model are calculated.It calculates steady-state and transient responses of the devices with different materials structures and is applied to an NPN transistor and MESFET.IV curves,electron density distribution and temperature variation are obtained.

Key words: TCAD, semiconductor device simulation, hydrodynamic model, drift-diffusion model

CLC Number:

TN43

GONG Ding, WANG Jianguo, ZHANG Dianhui, ZHANG Xianghua, HAN Feng, TONG Changjiang, ZHANG Maoyu. A General-purpose Two-dimensional Semiconductor Simulator[J]. CHINESE JOURNAL OF COMPUTATIONAL PHYSICS, 2007, 24(2): 247-252.

A General-purpose Two-dimensional Semiconductor Simulator

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