| [1] |
WANG Linxiang.
Monte-Carlo Simulation on Experiment of Range for Iron Ions Implanted into Plant Seeds
[J]. CHINESE JOURNAL OF COMPUTATIONAL PHYSICS, 2017, 34(2): 160-164.
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| [2] |
YOU Na, ZHANG Xianjun.
Analytical Model and Performance of Optimized Dual-channel 4H-SiC MESFETs
[J]. CHINESE JOURNAL OF COMPUTATIONAL PHYSICS, 2014, 31(1): 103-108.
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| [3] |
ZHANG Fasheng, ZHANG Yuming.
Simulation and Fabrication of High-Voltage 4H-SiC PiN Diode with JTE
[J]. CHINESE JOURNAL OF COMPUTATIONAL PHYSICS, 2011, 28(2): 306-312.
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| [4] |
WANG Ping, YANG Yintang, LIU Zengji, SHANG Tao, Guo Lixin.
Evaluation of DC I-V Characteristics and Small Signal Parameters of 4H-SiC Metal-Semiconductor Field Effect Transistors
[J]. CHINESE JOURNAL OF COMPUTATIONAL PHYSICS, 2011, 28(1): 145-151.
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| [5] |
LIU Qijun, LIU Zhengtang, FENG Liping.
First-principles Study of Electronic Structure and Optical Properties of A-La2O3
[J]. CHINESE JOURNAL OF COMPUTATIONAL PHYSICS, 2010, 27(5): 752-758.
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| [6] |
ZHANG Qian, ZHANG Yuming, ZHANG Yimen.
Modeling and Simulation of Double Base Epilayer 4H-SiC BJTs
[J]. CHINESE JOURNAL OF COMPUTATIONAL PHYSICS, 2010, 27(5): 771-778.
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| [7] |
TIAN Guangkun, HUANG Kama.
Unified Time Scale Algorithm for Thermal Effect of MESFET Under Irradiation of High Power Electromagnetic Pulses
[J]. CHINESE JOURNAL OF COMPUTATIONAL PHYSICS, 2009, 26(1): 107-113.
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| [8] |
HE Baoping, ZHANG Fengqi, YAO Zhibin.
Simulation of MOS Devices in Radiation and Post-irradiation
[J]. CHINESE JOURNAL OF COMPUTATIONAL PHYSICS, 2007, 24(1): 109-115.
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| [9] |
FANG Ming, FAN Zheng-xiu, HUANG Jian-bing.
Numerical Simulation of a Flat Planetary Fixture for Physical Vapor Deposition
[J]. CHINESE JOURNAL OF COMPUTATIONAL PHYSICS, 2006, 23(6): 738-742.
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| [10] |
WANG Lin-xiang, ZHU Heng-jiang, ZHANG Shi-feng, WANG Shi-heng.
A Monte Carlo Simulation of Penetration Depth and Concentration Distribution for 200keV Vanadium Ions Implanted into Peanuts
[J]. CHINESE JOURNAL OF COMPUTATIONAL PHYSICS, 2006, 23(6): 743-747.
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| [11] |
WANG Ping, YANG Yin-tang, YANG Yan.
A Calculation of Electron Hall Mobility in SiC
[J]. CHINESE JOURNAL OF COMPUTATIONAL PHYSICS, 2006, 23(1): 80-86.
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| [12] |
WANG Ping, YANG Yin-tang, QU Han-zhang, YANG Yan, LI Yue-jin, JIA Hu-jun.
Monte Carlo Simulations of Electron Transport in Silicon Carbide
[J]. CHINESE JOURNAL OF COMPUTATIONAL PHYSICS, 2005, 22(3): 245-250.
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| [13] |
WANG Yuan, ZHANG Yi-men, ZHANG Yu-ming.
High-frequency Performance Including Self-heating Effect for AlGaAs/GaAs Power HBT's
[J]. CHINESE JOURNAL OF COMPUTATIONAL PHYSICS, 2003, 20(5): 467-470.
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| [14] |
DU Gang, LIU Xiao-yan, SUN Lei, HAN Ru-qi.
A CHARGE CONSERVATION STATISTICS ENHANCEMENT METHOD USED IN SEMICONDUCTOR DEVICE MONTE CARLO SIMULATION
[J]. CHINESE JOURNAL OF COMPUTATIONAL PHYSICS, 2001, 18(6): 497-500.
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| [15] |
HE Hong-bo, Zhou Ji-cheng, HU Hui-fang, LI Yi-bing.
THE WAVE PACKET EVOLUTION SIMULATION OF THE I-V PROPERTY OF NANOPARTICLE SELF ASSEMBLY SYSTEMS
[J]. CHINESE JOURNAL OF COMPUTATIONAL PHYSICS, 2001, 18(2): 170-172.
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