Numerical Simulation of Nonlinear Electric Field in Diamond Film Growth at Low Temperature via EACVD

CHINESE JOURNAL OF COMPUTATIONAL PHYSICS ›› 2003, Vol. 20 ›› Issue (5): 399-402.

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Numerical Simulation of Nonlinear Electric Field in Diamond Film Growth at Low Temperature via EACVD

ZHAO Qing-xun, ZHANG Jing, XIN Hong-li, WEN Qin-ruo, YANG Jing-fa

College of Physics Science and Technology, Hebei University, Baoding 071002, China

Received:2002-08-09 Revised:2002-12-17 Online:2003-09-25 Published:2003-09-25

Abstract

Abstract: Monte Carlo simulations are adopted to study the distribution of the nonlinear electric field in the reaction field of diamond film growth at low temperature via EACVD. The results indicate that the distribution of the electric field near the anode in the reaction field changes by exponential rules. Under certain bias voltages with the changing of pressure, there will be a reverse electric field near the anode. This reverse electric field is very important to some positive ions in diamond film growth at low temperature.

Key words: Monte Carlo simulation, diamond film, EACVD

CLC Number:

O484.1

ZHAO Qing-xun, ZHANG Jing, XIN Hong-li, WEN Qin-ruo, YANG Jing-fa. Numerical Simulation of Nonlinear Electric Field in Diamond Film Growth at Low Temperature via EACVD[J]. CHINESE JOURNAL OF COMPUTATIONAL PHYSICS, 2003, 20(5): 399-402.

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Numerical Simulation of Nonlinear Electric Field in Diamond Film Growth at Low Temperature via EACVD

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