Abstract: The Single Event Upset (SEU) of a 16 K random access memory (RAM) silicon chip induced by a beam of incident neutrons with 10-20 MeV energies is simulated by a Monte Carlo method. The angle distributions and energy distributions of the proton and alpha particles from the reactions of (n,p) and (n,α) have been obtained with the average angles and average energies of these outing charged particles. For different critical charge of the 16 K RAM silicon chip and different ratio of width and length of sensitive volume, the calculated results cover the incident neutron flux which can induce one upset of these sensitive volume in the chip, and the cross section of SEU of the chip.

Key words: Cross section of SEU, Single Event Effet, Monte Carlo simulation