Electron Beam Scattering Trajectories in Langmuir-Blodgett Resists and Substrates: A Monte-Carlo Simulation

CHINESE JOURNAL OF COMPUTATIONAL PHYSICS ›› 1994, Vol. 11 ›› Issue (3): 297-302.

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Electron Beam Scattering Trajectories in Langmuir-Blodgett Resists and Substrates: A Monte-Carlo Simulation

Lu Wu, Gu Ning, Lu Zuhong, Wei Yu

National Laboratory of Molecular and Biomolecular Electronics, Southeast University Naming 210018, P. R. China

Received:1992-12-10 Online:1994-09-25 Published:1994-09-25

Abstract

Abstract: The transmitting characteristics of high-energy electron beam in Langmuir-Blodgett (LB) film and multilayer films have been studied. The electron trajectories in LB polymethylmethacrylate (PMMA)resists and Si substrate covered with Cr film have been simulated on computer by applying Monte-Carlo technique.The advantages of LB resists in electron beam exposure lithography have been discussed in this paper.

Key words: Monte-Carlo simulation, electron scatter, Langmuir-Blodgett (LB) film

CLC Number:

O411.2

Lu Wu, Gu Ning, Lu Zuhong, Wei Yu. Electron Beam Scattering Trajectories in Langmuir-Blodgett Resists and Substrates: A Monte-Carlo Simulation[J]. CHINESE JOURNAL OF COMPUTATIONAL PHYSICS, 1994, 11(3): 297-302.

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Electron Beam Scattering Trajectories in Langmuir-Blodgett Resists and Substrates: A Monte-Carlo Simulation

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