Electron Mobility in Silicon Under Uniaxial[110] Stress

Abstract

Abstract: Conduction band structure of silicon under uniaxial[110] stress is studied with two band k·p perturbation theory. Splitting energy of conduction band minima and electron effective mass as a function of stress and direction electron mobility in uniaxial stressed silicon are obtained with relax time approximate theory. Intervalley scattering, intravalley scattering, and ionized impurity scattering are considered in calculation. It is demonstrated that as uniaxial[110] stress is applied on silicon crystal, a significant anisotropy in electron mobility can be observed. Among crystal directions[001],[110], and[110], electron mobility along[110] direction under uniaxial[110] tensile stress has a profound enhancement, which increase from 1 450 cm²·Vs^-1 to 2 500 cm²·Vs^-1 as stress change from 0 to 2 GPa. Electron mobility enhancement is mainly due to uniaxial stress induced conduction effective mass reduction, while suppression of intervalley scattering plays a minor role.

Key words: uniaxial stressed silicon, conduction band structure, scattering, electron mobility

CLC Number:

TN432

MA Jianli, FU Zhifen, LI Yang, TANG Xudong, ZHANG Heming. Electron Mobility in Silicon Under Uniaxial[110] Stress[J]. CHINESE JOURNAL OF COMPUTATIONAL PHYSICS, 2017, 34(4): 483-488.

References

[1] HASHEMI P, BALAKRISHNAN K, OTT J A, et al. Strained-SiGe channel FinFETs for high-performance CMOS:Opportunities and challenges[J]. ECS Transactions, 2015, 66(4):17-30.
[2] DAMAS P, LE R X, LE B D, et al. Wavelength dependence of Pockels effect in strained silicon waveguides[J]. Optics Express, 2014, 22(18):22095-22100.
[3] KUKITA K, KAMAKURA Y. Monte Carlo simulation of phonon transport in silicon including a realistic dispersion relation[J]. Journal of Applied Physics, 2013, 114(15):154312.
[4] REVELANT A, PALESTRI P, OSGNACH P, et al. Calibrated multi-subband Monte Carlo modeling of tunnel-FETs in silicon and Ⅲ-V channel materials[J]. Solid-State Electronics, 2013, 88(10):54-60.
[5] CHAUDHRY A, SANGWAN S. An analytical hole mobility model for biaxial strained-Si-p-MOSFET[J]. Journal of Computational and Theoretical Nanoscience, 2013, 10(5):1085-1090.
[6] UNGERSBOECK E, GÖS W, DHAR S, et al. The effect of uniaxial stress on band structure and electron mobility of silicon[J]. Mathematics and Computers in Simulation, 2008, 79(4):1071-1077.
[7] VIKSTORr S. Strain-induced effects in advance vikstor S 2011 strain-induced effects in advanced MOSFETs[M]. New York:Springer, 2011:108-121.
[8] HENSEL J C, HASEGAWA H, NAKAYAMA M. Cyclotron resonance in uniaxially stressed silicon. Ⅱ. Nature of the covalent bond[J]. Physical Review, 1965, 138(1A):225-237.
[9] 刘恩科, 朱炳升,罗晋生. 半导体体物理学[M]. 北京:电子工业出版社, 2003:442.
[10] 季振国. Ⅳ族、Ⅲ-Ⅴ族和Ⅱ-Ⅵ族半导体材料的特性[M]. 北京:科学出版社, 2009:37-38.
[11] BARDEEN J, SHOCKLEY W. Deformation potentials and mobilities in non-polar crystals[J]. Physical Review, 1950, 80(1):72-76.
[12] TANG J Y, HESS K. Theory of hot electron emission from silicon into silicon dioxide[J]. Journal of Applied Physics, 1983, 54(9):5145-5151.
[13] CHATTOPADHYAY D, QUEISSER H J. Electron scattering by ionized impurities in semiconductors[J]. Reviews of Modern Physics, 1981, 53(4):745-749.
[14] SEO W H, DONEGAN J F. 6×6 effective mass Hamiltonian for hetero-structures grown on (11N)-oriented substrates[J]. Physical Review B, 2003, 68(7):075318-1-5.
[15] MAEGAWA T, YAMAUCHI T, HARA T, et al. Strain effects on electronic band structures in nanoscaled silicon:From bulk to nanowire[J]. Electron Devices, IEEE Transactions on, 2009, 56(4):553-559.
[16] UNGERSBOECK E, GÖS W, DHAR S, et al. The effect of uniaxial stress on band structure and electron mobility of silicon[J]. Mathematics and Computers in Simulation, 2008, 79(4):1071-1077.
[17] SCHÄFFLER F, HERZOG H J, JORKE H, et al. Influence of thermal annealing on the electron mobility in modulation doped Si/SiGe heterostructures[J]. Journal of Vacuum Science & Technology B, 1991, 9(4):2039-2044.