Electrical Characteristics of Coaxial-Annular Through Silicon Via

doi:10.19596/j.cnki.1001-246x.7615

Abstract

Abstract: For coaxial-annular through silicon vias (CA-TSV) structure with superior performances, characteristic impedance, power, time constant and analytical models of parasitic parameters are proposed and effects of structural parameters on electrical properties are studied. S21 parameter was verified by software HFSS. It shows that increasing inner diameter of CA-TSV or reducing outer diameter reduces characteristic impedance, while reducing inner diameter of CA-TSV or increasing outer diameter reduces its power consumption effectively. Increasing inner diameter of CA-TSV or outer diameter reduces time constant of RC equivalent circuit, whereas increasing inner diameter of CA-TSV or reducing outer diameter reduces time constant of RL equivalent circuit. Increasing inner diameter of CA-TSV or outer diameter reduces resistance effectively and capacitance can be increased significantly. It provides reference for electrical properties of three-dimensional integrated circuits based on TSV interconnects.

Key words: CA-TSV, 3D-IC, electrical characteristics

CLC Number:

TN402

WANG Fengjuan, WANG Gang, YU Ningmei. Electrical Characteristics of Coaxial-Annular Through Silicon Via[J]. CHINESE JOURNAL OF COMPUTATIONAL PHYSICS, 2018, 35(2): 242-252.

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