Abstract: Reverse voltage characterizations of 4H-SiC PiN diodes with junction termination extension(JTE) are simulated by using a two-dimensional device simulator(ISE-TCAD 10).0.4H-SiC PiN diodes with JTE are fabricated with a planar fabrication process based on simulation.Good consistency between simulation and experiments was achieved.It shows that a 4H-SiC PiN diode with optimized JTE edge termination can reach a breakdown voltage of 1600 V,which is more than 90 percent of ideal parallel plane junction breakdown voltage.

Key words: 4H-SiC PiN diode, JTE, simulation, process, breakdown voltage