Abstract: Monte Carlo method is used to simulate ions in a double-layer target of Ti film on Al substrate.As high-intensity pulsed ion beam (HIPIB) irradiates on target,deposited energy results in rapid increase of surface temperature.Meanwhile high energy ions make cross mixing among atoms at film and substrate interface.Shooting ions and energy deposition influence melting or vaporization of target materials.It changes adhesion between film and substrate.It shows that cascade collision mixing is not a main process in mixing of a double-layer target by HIPIB irradiation.The most preferable ion current densities lie in a range of 100 A·cm^-2~150A·cm^-2.

Key words: high-intensity pulsed ion beam, double-layer target, mixing, Monte Carlo