CHINESE JOURNAL OF COMPUTATIONAL PHYSICS ›› 2009, Vol. 26 ›› Issue (5): 758-762.

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Monte Carlo Simulation of Cluster Growth at Different Temperatures

XU Xiaojun1, WANG Fengfei2   

  1. 1. Department of Applied Physics, Zhejiang University of Technology, Hangzhou 310014, China;
    2. Zhejiang Changzheng Professional & Technical College, Hangzhou 310023, China
  • Received:2008-04-17 Revised:2008-12-01 Online:2009-09-25 Published:2009-09-25

Abstract: Binding energy of substrate,coupling energy of nearest neighbor particles and strain field are introduced to diffusion barrier.Cluster growth process at different temperatures is investigated with Monte Carlo simulation.It shows that as 400 K≤T ≤ 480 K the average width of ramified clusters is independent on temperature T and is almost equal to the diameter of single particle.As 500 K≤T ≤ 680 K,however,width of the ramified cluster increases gradually to that of 4 particles with increasing temperature.As T increases further,clusters with large number of particles disappear,due to strong activity of particles.Average number of particles in each cluster is smaller than 2.Evolution of cluster morphology during growth process and number of cluster at temperatures are studied as well.

Key words: Monte Carlo simulation, fractal, thin film

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