Abstract: For a magnetic tunneling junction with ferromagnetic metal/magnetic potential barrier layer/ferromagnetic metal structure, tunneling conductance, spin polarization and tunneling magneto resistance rate under zero bias voltage are calculated in a quasi-free electron model. The impact of potential barrier, molecular field strength and molecular field orientation, etc. on tunneling of electrons is analyzed. It exhibits useful instructions for the design of spin electronic devices.

Key words: magnetic tunnel junction, spin-polarized electron, tunneling conductance