CHINESE JOURNAL OF COMPUTATIONAL PHYSICS ›› 2008, Vol. 25 ›› Issue (3): 365-372.

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Electronic Structure and Photoelectric Properties of Rutile VO2

SONG Tingting, HE Jie, MENG Qingkai, SUN Peng, ZHANG Lei, LIN Libin   

  1. Key Laboratory for Radiation Physics and Technology of Ministry of Education, Department of Physics, Sichuan University, Chengdu 610064, China
  • Received:2007-01-26 Revised:2007-06-27 Online:2008-05-25 Published:2008-05-25

Abstract: Electronic structure and photoelectrical properties of VO2, such as dielectric constant, absorption constant, refractive index, and conductance are studied with SCC-DV-Xα-ECM method. A broad band, in the upper part of which Fermi energy level is located, is formed by combination of 2p energy band of O and 3d energy band of V. VO2 exhibits metal characteristics. The peak around 0.8 eV is dominated by electronic intraband transition and the peak between 5~7 eV is mainly dominated by electronic band-to-band transition. The refractive index and extinction coefficients calculated consist with experimental results.

Key words: V02, SCC-DV-Xα-ECM, electronic structure, photoelectric properties

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