Influence of surface potential barrier on escape probability of gradient-doping negative electron affinity (NEA) GaN photocathode was studied. Electron energy distribution and escape probability are calculated and compared with those of uniform-doping GaN photocathode. It shows that gradient-doping NEA GaN photocathode can obtain higher electron escape probability. And barrier I has an evident influence on escape probability while barrier Ⅱ has limited influence. Photocurrents of two GaN photocathodes are measured with a multi-information-test system. Experimental results show that gradient-doping GaN photocathode has higher escape probability. Obvious effect on escape probability can be found by barrier I from Cs-activation while barrier Ⅱ from Cs/O-joint-activation has little impact.