Ballistic performance of single-material-gate and triple-material-gate graphene nanoribbon field effect transistors (GNRFETs) with various doping profiles is studied in a quantum kinetic model based on non-equilibrium Green's functions (NEGF) solved self-consistently with Poisson's equations.It shows that triple-material-gate GNRFET with linear doping (TL-GNRFET) exhibits significant advantage in reducing SCEs and DIBL effects,as well as achieving better subthreshold slope and better on/off current ratio.In addition,asymmetric gate underlap is also discussed.It is revealed that as top and bottom gates are both shifted towards source on/off state current performance is improved.