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EQUIVALENT CIRCUITS SIMULATION FOR SINGLE EVENT GATE RUPTURE OF POWER MOSFETs
TANG Ben-qi, WANG Yian-ping, GEN Bin, CHEN Xiao-hua
CHINESE JOURNAL OF COMPUTATIONAL PHYSICS
2000, 17 (S1):
77-81.
DOI: 10.3969/j.issn.1001-246X.2000.01.014
A new model is established to perform simulation for Single-Event Gate-Rupture of power MOSFETs in use of PSPICE circuit simulation software. The application results have a very good agreement with the corresponding data in published articles.
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