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Spin-polarized Electrons Tunneling Through Magnetic Junctions
ZHAO Junqing, QIAO Shizhu, ZHANG Ningyu, ZHANG Huijun, HE Peng
CHINESE JOURNAL OF COMPUTATIONAL PHYSICS
2008, 25 (2):
235-240.
For a magnetic tunneling junction with ferromagnetic metal/magnetic potential barrier layer/ferromagnetic metal structure, tunneling conductance, spin polarization and tunneling magneto resistance rate under zero bias voltage are calculated in a quasi-free electron model. The impact of potential barrier, molecular field strength and molecular field orientation, etc. on tunneling of electrons is analyzed. It exhibits useful instructions for the design of spin electronic devices.
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