The electron transport properties in 2H-,4H-,and 6H-Silicon Carbide are investigated numerically with an ensemble Monte Carlo technique.The acoustic phonon deformation potential scattering,polar optical phonon scattering,intervalley phonon deformation scattering,ionized impurity scattering and neutral impurity scattering are considered.The electron mobilities of 2H-,4H-,and 6H-SiC as a function of temperature at low electric field are obtained.The influence of the neutral impurity scattering on the transport property of 4H-SiC is discussed in detail.Finally,the static and transient variation of electron drift velocity in high electric fields are studied.The peak transient velocity in an electricfield of 1.0×10⁶ V·cm^-1 is 3.3×10⁷cm·s~(-1) for 4H-Sic and 3.0×10⁷ cm·s^-1 for 6H-Sic when the electric field is applied perpendicular to the c axis.The simulated results are in good agreement with recent experiments in a wide range of temperature and electric field.