Molecular dynamics simulations are performed for single crystal aluminum with voids and vacancies under uniaxial tension. Effects of crystalline orientation,initial void volume fraction,and concentration of vacancies on growing process of voids are investigated. It indicates that at different orientation, decisive microscopic machanism of void growing is different. At orientation[010], decisive machanism is stacking fault caused by dislocations on {111} surface, while at orientation[111], decisive machanism is movement and accumulation of dislocations.Besides, initial void volume fraction and concentration of vacancies have remarkable influence on growing precess of voids.Totally, macroscopic effective Young's modulus and incipient yield strength decrise with increasing void volume fraction or concentration of vacancies.

We introduce briefly a synthetic kernel method for radiation transport equation and analyse computational error and convergence.Quadrature sets and error amendment technique are proposed to improve computational accuracy of synthetic kernel method.By using quadrature sets and error amendment technique synthetic kernel method yields accurate results even with low orders.