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THE MONTE CARLO SIMULATION FOR THE STRUCTURE AND THE DEFECT STATES OF a-Si:H
Lu Xian-ping, Wu Xiang
CHINESE JOURNAL OF COMPUTATIONAL PHYSICS
1985, 2 (3):
380-385.
In this paper the function of dangling bound is considered and the structure of hydrogepated amorphous silicon is simulated by Monte Carlo Method. The radiai distrioution functions and other statistical quantities are agreement with experimental data. The incorporation form of hydrogen atom is also qualitative consitent with the knowledge from experiments.
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