A self-heating model is presented to predict the high-frequency performance of AlGaAs/GaAs heterojunction bipolar transistors (HBT's) including high current and thermal effects. A base pushout effect is discussed at high current region. And in this case, the lattice temperature, the cut-off frequency and the maximum frequency versus the collector current density are achieved.

An analytical non-linear model including surface-state effect is proposed for 4H-SiC power MESFET's with which the impact of suface damage at the ungate recess region caused by the dry-etching process on the output steady-state characterization can be illustrated clearly.The model has the advantage in very simple calculations over the 2D numerical simulations, therefore suitable for process analysis of SiC power MESFET's.

The MEDICI software of two dimensional simulation of semiconductor device is briefly introduced.Its characteristics and use are described.With the help of MEDICI,effects of total dose for MOSFET and dose rate for pn junction are simulated.Their physical models are set up.A theory approach is provided for the research of ionization radiation effects.