Reverse voltage characterizations of 4H-SiC PiN diodes with junction termination extension(JTE) are simulated by using a two-dimensional device simulator(ISE-TCAD 10).0.4H-SiC PiN diodes with JTE are fabricated with a planar fabrication process based on simulation.Good consistency between simulation and experiments was achieved.It shows that a 4H-SiC PiN diode with optimized JTE edge termination can reach a breakdown voltage of 1600 V,which is more than 90 percent of ideal parallel plane junction breakdown voltage.

With characteristics of 4H-SiC,a double base epilayer 4H-SiC bipolar junction transistors(BJTs) is investigated.By analyzing build-in electric field in the base region and the base transit time,the device is numerically calculated in two-dimensional models according to orthogonal experiments.A mean range analysis is made to find optimized structure of 4H-SiC BJTs.It shows that common emitter current gain with negative temperature coefficient is about 72 and it remains high in a wide range of collector current.

The static power and ground(P/G) network is analyzed by a combination of compressed equivalent circuit modeling and random wall algorithm.A model of power and ground network is obtained by parameter extraction and modeling over whole chips.The method builds an equivalent model for original network and uses random walk method to solve the simplified network.As a result,the improved compressed random walk algorithm saves CPU time greatly.The speed of the algorithm is more than two order of magnitude faster than the normal random walk algorithm.