同轴-环形TSV电学性能

doi:10.19596/j.cnki.1001-246x.7615

计算物理 ›› 2018, Vol. 35 ›› Issue (2): 242-252.DOI: 10.19596/j.cnki.1001-246x.7615

• • 上一篇

同轴-环形TSV电学性能

王凤娟, 王刚, 余宁梅

西安理工大学自动化与信息工程学院, 西安 710048

收稿日期:2017-01-03 修回日期:2017-06-28 出版日期:2018-03-25 发布日期:2018-03-25
作者简介:王凤娟(1985-),女,副教授,博士,主要从事硅通孔与三维集成电路相关研究,E-mail:wfjxiao4@163.com
基金资助:
国家自然科学基金（61774127，61404105，61771388和61471296）资助项目

Electrical Characteristics of Coaxial-Annular Through Silicon Via

WANG Fengjuan, WANG Gang, YU Ningmei

School of Automation and Information Engineering, Xi'an University of Technology, Xi'an 710048, China

Received:2017-01-03 Revised:2017-06-28 Online:2018-03-25 Published:2018-03-25

摘要/Abstract

摘要： 针对性能优越的同轴-环形硅通孔（Coaxial-Annular Through Silicon Via，CA-TSV）结构，提出特征阻抗、功率、时间常数及寄生参数的解析模型，研究结构参数对电学特性的影响，并通过HFSS软件对S21参数进行验证.结果表明：增加CA-TSV的内径或减小其外径可以有效减小特征阻抗，而减小其内径或增加其外径可以有效减小功率；增加CA-TSV的内径或外径可以有效减小RC等效电路的时间常数，而增大其内径或减小其外径可以有效减小RL等效电路的时间常数；增加CA-TSV的内径或外径可以有效减小电阻并且可以使电容值显著提高.

关键词: 同轴-环形硅通孔, 三维集成电路, 电学性能

Abstract: For coaxial-annular through silicon vias (CA-TSV) structure with superior performances, characteristic impedance, power, time constant and analytical models of parasitic parameters are proposed and effects of structural parameters on electrical properties are studied. S21 parameter was verified by software HFSS. It shows that increasing inner diameter of CA-TSV or reducing outer diameter reduces characteristic impedance, while reducing inner diameter of CA-TSV or increasing outer diameter reduces its power consumption effectively. Increasing inner diameter of CA-TSV or outer diameter reduces time constant of RC equivalent circuit, whereas increasing inner diameter of CA-TSV or reducing outer diameter reduces time constant of RL equivalent circuit. Increasing inner diameter of CA-TSV or outer diameter reduces resistance effectively and capacitance can be increased significantly. It provides reference for electrical properties of three-dimensional integrated circuits based on TSV interconnects.

Key words: CA-TSV, 3D-IC, electrical characteristics

中图分类号:

TN402

王凤娟, 王刚, 余宁梅. 同轴-环形TSV电学性能[J]. 计算物理, 2018, 35(2): 242-252.

WANG Fengjuan, WANG Gang, YU Ningmei. Electrical Characteristics of Coaxial-Annular Through Silicon Via[J]. CHINESE JOURNAL OF COMPUTATIONAL PHYSICS, 2018, 35(2): 242-252.

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同轴-环形TSV电学性能

Electrical Characteristics of Coaxial-Annular Through Silicon Via

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