计算物理 ›› 1999, Vol. 16 ›› Issue (6): 642-645.

• 论文 • 上一篇    下一篇

Si11+离子能级和振子强度

闫公敬, 周忠源, 潘守甫   

  1. 吉林大学原子与分子物理研究所, 长春 130023
  • 收稿日期:1998-01-23 修回日期:1999-05-03 出版日期:1999-11-25 发布日期:1999-11-25
  • 作者简介:闫公敬,男,34,副教授,黑龙江省克山县克山师专组织部,161601
  • 基金资助:
    中国原子与分子数据研究联合体资助课题

Energy levels and oscillator strengths of Si11+

Yan Gongjing, Zhou Zhongyuan, Pan Shoufu   

  1. Institute of Atomic and Molecular Physics, Jilin University, Changchun 130023
  • Received:1998-01-23 Revised:1999-05-03 Online:1999-11-25 Published:1999-11-25

摘要: 用组态相互作用程序CIV3 计算了Si11+离子能级和振子强度。在计算中,考虑了一个电子保持在1s 轨道上,其余两个电子各种布居组态的组态相互作用。这种方法大大地改善了振子强度的计算结果。

关键词: 组态相互作用, 能级, 振子强度

Abstract: Energy levels and oscillator strengths of Si11+ are computed by using CI code CIV3.In the calculation all configuration interactions are taken into account for the various configurations formed by keeping one electron on 1s orbital and populating the two other electrons on the rest orbitals.It is shown that the oscillator strengths computed in such a way are much improved.

Key words: configuration interaction, energy level, oscillator strength

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