电荷直接隧穿特征时间的计算模型

计算物理 ›› 2007, Vol. 24 ›› Issue (1): 71-77.

电荷直接隧穿特征时间的计算模型

杨红官, 李晓阳, 刘全慧

湖南大学应用物理系, 湖南长沙 410082

收稿日期:2005-10-18 修回日期:2006-04-06 出版日期:2007-01-25 发布日期:2007-01-25
作者简介:杨红官(1966-),男,河南夏邑,副教授,博士,主要从事纳米电子器件方面的研究.
基金资助:
湖南省青年骨干教师项目;湖南大学自然科学基金(521105008)资助项目

Characteristic Time of Direct Charge Tunneling in a Silicon Nanocrystal Based Memory

YANG Hongguan, LI Xiaoyang, LIU Quanhui

Departrment of Applied Physics, Hunan University, Changsha 410082, China

Received:2005-10-18 Revised:2006-04-06 Online:2007-01-25 Published:2007-01-25

摘要/Abstract

摘要： 在分析硅基纳米存储器的势结构和价带混合效应对直接隧穿过程影响的基础上,采用顺序隧穿理论和巴丁传输哈密顿方法,发展了电子和空穴直接隧穿时间的计算模型.利用该模型数值计算了硅基纳米存储器的编程时间和保留时间,讨论了结构参数和外加偏压对器件存储性能的影响,指出需要设计新的器件结构模型来优化硅基纳米存储器的保留特性.

关键词: 直接隧穿, 传输哈密顿方法, 纳米存储器

Abstract: Considering potential configuration of a silicon nanocrystal based memory and the mixing effect of valence bands,we calculate direct tunneling time of electron and hole with sequential tunnel theory and in the Bardeen's transfer Hamiltonian formalism.The programming and retention times of a silicon nanocrystal based memory are calculated.Influences of structure and bias on the performance of device are discussed.It is shown that new devices are expected in order to improve the retention property of silicon nanocrystal based memories.

Key words: direct tunneling, transfer Hamiltonian formalism, nanocrystals based memory

中图分类号:

O11.9

杨红官, 李晓阳, 刘全慧. 电荷直接隧穿特征时间的计算模型[J]. 计算物理, 2007, 24(1): 71-77.

YANG Hongguan, LI Xiaoyang, LIU Quanhui. Characteristic Time of Direct Charge Tunneling in a Silicon Nanocrystal Based Memory[J]. CHINESE JOURNAL OF COMPUTATIONAL PHYSICS, 2007, 24(1): 71-77.