双沟4H-SiC MESFET优化结构的解析模型及性能

计算物理 ›› 2014, Vol. 31 ›› Issue (1): 103-108.

双沟4H-SiC MESFET优化结构的解析模型及性能

游娜, 张现军

青岛科技大学自动化与电子工程学院, 青岛 266042

收稿日期:2013-04-10 修回日期:2013-04-10 出版日期:2014-01-25 发布日期:2014-01-25
作者简介:游娜(1978-),女,硕士,助教,从事半导体器件和微波器件研究,E-mail:ann832le8@8ina.com
基金资助:
青岛科技大学人才引进基金资助项目

Analytical Model and Performance of Optimized Dual-channel 4H-SiC MESFETs

YOU Na, ZHANG Xianjun

College of Automation & Electronic Engineering, Qingdao University of Science & Technology, Qingdao 266042, China

Received:2013-04-10 Revised:2013-04-10 Online:2014-01-25 Published:2014-01-25

摘要/Abstract

摘要： 优化双沟4H-SiC MESFET结构,通过求解一维和二维泊松方程,建立优化结构的解析模型,分析这种结构的直流和交流特性.结果表明,饱和电流密度的计算结果与实验一致,结构优化后4H-SiC MESFET的饱和电流密度和击穿电压分别为420μA·μm^-1和155 V,明显高于优化前的275μA·μm^-1和141 V;最高输出功率密度为7.4 W·mm^-1,比优化前提高约64%;截止频率和最高振荡频率比优化前略微提高.双沟结构经优化后其交流小信号特性未退化而功率特性获得明显改善.

关键词: H-SiC, MESFETs, 泊松方程

Abstract: Dual-channel 4H-SiC MESFET is optimized for high power microwave applications.Physics-based analytical models for the device are obtained by solving one- and two-dimensional Poisson's equations.Direct-current (DC) and alternating-current (AC) performances of the 4H-SiC MESFET are calculated.The result is in agreement with experimental data.Calculated maximum saturation current density and breakdown voltage are about 420 μA·μm^-1 and 155 V,respectively,which are greater than those of dual-channel structure,275 μA·μm^-1 and 141 V.Resultant maximum output power density is 7.4 W·mm^-1,which is 64% higher than that of dual-channel structure.Cutoff frequency and the maximum oscillation frequency are slightly improved.The power performance is significantly improved while its AC characteristics are not degraded.

Key words: H-SiC, MESFETs, Poisson's equation

中图分类号:

TN302

游娜, 张现军. 双沟4H-SiC MESFET优化结构的解析模型及性能[J]. 计算物理, 2014, 31(1): 103-108.

YOU Na, ZHANG Xianjun. Analytical Model and Performance of Optimized Dual-channel 4H-SiC MESFETs[J]. CHINESE JOURNAL OF COMPUTATIONAL PHYSICS, 2014, 31(1): 103-108.

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