计算物理 ›› 2006, Vol. 23 ›› Issue (4): 477-482.

• 研究论文 • 上一篇    下一篇

基于能带结构的布里渊区非均匀四面体网格生成技术

陈勇1, RAVAIOLI Umberto2   

  1. 1. 电子科技大学, 微电子与固体电子学院, 四川 成都 610054;
    2. Beckman Institute of Advanced Science and Technology, University of Hlinois at Urbana-Champaingn, Urbana, IL, 61801 USA
  • 收稿日期:2005-03-28 修回日期:2005-07-18 出版日期:2006-07-25 发布日期:2006-07-25
  • 作者简介:陈勇(1965-),男,博士,副教授,从事半导体材料及器件基础研究.

A Band Structure Based Nonuniform Brillouin Zone Tetrahedron Approach

CHEN Yong1, RAVAIOLI Umberto2   

  1. 1. School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China;
    2. Beckman Institute of Advanced Science and Technology, University of Illinois at Urbana-Champaign, Urbana, IL, 61801 USA
  • Received:2005-03-28 Revised:2005-07-18 Online:2006-07-25 Published:2006-07-25

摘要: 基于非局域赝势能带计算及四面体网格单元中能量满足线性关系,提出一种布里渊区非均匀四面体网格产生方法,在满足精度条件下能自动得出数目最少的四面体网格,使布里渊区积分计算的精度和效率大为提高.通过对硅、锗两种金刚石结构半导体简约布里渊区所产生网格的比较,表明该方法可以根据能带结构的特点自动生成优化的非均匀网格.对现有的态密度四面体计算公式进行了补充完善,并根据生成的网格和完善后的公式计算了硅和锗导带第一、二能带的态密度.

关键词: 四面体网格, 简约布里渊区, 非局域赝势, 布里渊区积分

Abstract: We propose a "state of art"tetrahedron sampling scheme based on a nonlocal pseudopotential bandstructure calculation and linear energy interpolation in each tetrahedron cell.In this approach,a relatively small amount of tetrahedrons are produced automatically and the Brillouin integration is calculated with higher precision and efficiency.In an application to diamond materials of Si and Ge,optimized nonuniform meshes are obtained automatically in the 1/48 irreducible wedge of the brillouin zone.A complement is given for the integrality of the present tetrahedron DOS expression and the DOS's for the first and second conductance band of Si and Ge are obtained with this grid and the supplemented expression.

Key words: tetrahedron grid, irreducible wedge of Brillouin zone, nonlocal pseudopotential, Brillouin zone integration

中图分类号: