计算物理 ›› 1994, Vol. 11 ›› Issue (3): 297-302.

• 论文 • 上一篇    下一篇

电子束在LB抗蚀层及衬底中散射轨迹的Monte-Carlo模拟

鲁武, 顾宁, 陆祖宏, 韦钰   

  1. 东南大学分子与生物分子电子学实验室, 南京 210018
  • 收稿日期:1992-12-10 出版日期:1994-09-25 发布日期:1994-09-25

Electron Beam Scattering Trajectories in Langmuir-Blodgett Resists and Substrates: A Monte-Carlo Simulation

Lu Wu, Gu Ning, Lu Zuhong, Wei Yu   

  1. National Laboratory of Molecular and Biomolecular Electronics, Southeast University Naming 210018, P. R. China
  • Received:1992-12-10 Online:1994-09-25 Published:1994-09-25

摘要: 研究了高能电子束在LB膜及多层膜中的输运特性,用Monte-Carlo技术模拟了电子在LB聚甲基丙烯酸甲酯抗蚀层及蒸镀有铬膜的硅衬中的散射轨迹,并讨论了电子束曝光刻蚀中应用LB膜作抗蚀层的优越性。

关键词: Monte-Carlo模拟, 电子散射, LB膜

Abstract: The transmitting characteristics of high-energy electron beam in Langmuir-Blodgett (LB) film and multilayer films have been studied. The electron trajectories in LB polymethylmethacrylate (PMMA)resists and Si substrate covered with Cr film have been simulated on computer by applying Monte-Carlo technique.The advantages of LB resists in electron beam exposure lithography have been discussed in this paper.

Key words: Monte-Carlo simulation, electron scatter, Langmuir-Blodgett (LB) film

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