计算物理 ›› 1985, Vol. 2 ›› Issue (3): 380-385.

• 论文 • 上一篇    

非晶态硅氢结构及其缺陷态的蒙特卡罗模拟

陆献平, 吴翔   

  1. 同济大学固体物理研究室
  • 收稿日期:1984-12-27 修回日期:1985-05-16 出版日期:1985-09-25 发布日期:1985-09-25

THE MONTE CARLO SIMULATION FOR THE STRUCTURE AND THE DEFECT STATES OF a-Si:H

Lu Xian-ping, Wu Xiang   

  1. Pohl-Institute of Solid State Physics, Tongji University
  • Received:1984-12-27 Revised:1985-05-16 Online:1985-09-25 Published:1985-09-25

摘要: 本文在考虑了悬挂键的情况下,用蒙特卡罗方法模拟了非晶态硅氢结构,径向分布函数等统计量和实验基本相符。氢原子的结合形式也和实验基本一致。

Abstract: In this paper the function of dangling bound is considered and the structure of hydrogepated amorphous silicon is simulated by Monte Carlo Method. The radiai distrioution functions and other statistical quantities are agreement with experimental data. The incorporation form of hydrogen atom is also qualitative consitent with the knowledge from experiments.