单轴[110]应力硅电子迁移率

计算物理 ›› 2017, Vol. 34 ›› Issue (4): 483-488.

单轴[110]应力硅电子迁移率

马建立¹, 付志粉¹, 李洋¹, 唐旭东¹, 张鹤鸣²

1. 安徽理工大学力学与光电物理学院, 淮南 232001;
2. 西安电子科技大学微电子学院, 西安 710071

收稿日期:2016-04-06 修回日期:2016-06-16 出版日期:2017-07-25 发布日期:2017-07-25
作者简介:马建立(1979-),男,博士,讲师,研究方向:硅基应变材料及器件,E-mail:jianlima2005@126.com
基金资助:
国家自然科学青年基金（51502005）和安徽理工大学青年教师科学研究基金资助项目

Electron Mobility in Silicon Under Uniaxial[110] Stress

MA Jianli¹, FU Zhifen¹, LI Yang¹, TANG Xudong¹, ZHANG Heming²

1. School of Mechanics and Optoelectronic Physics, Anhui University of Science and Technology, Huainan, 232001, China;
2. School of Microelectronics, Xidian University, Xi'an, 710071, China

Received:2016-04-06 Revised:2016-06-16 Online:2017-07-25 Published:2017-07-25

摘要/Abstract

摘要： 基于k·p微扰法研究单轴[110]应力作用下硅的导带结构，获得单轴[110]应力硅的导带底能量及电子有效质量.在此基础上，考虑电子谷间、谷内及电离杂质散射，采用弛豫时间近似计算单轴[110]应力硅沿不同晶向的电子迁移率.结果表明：单轴[110]应力作用下硅的电子迁移率具有明显的各向异性.在[001]、[110]及[110]输运晶向中，张应力作用下电子沿[110]晶向输运时迁移率有较大的增强，由未受应力时的1 450 cm²·Vs^-1提高到2 GPa应力作用下的2 500 cm²·Vs^-1.迁移率增强的主要原因是电子有效质量的减小，而应力作用下硅导带能谷分裂导致的谷间散射几率的减小对电子迁移率的影响并不显著.

关键词: 单轴应力硅, 导带结构, 散射, 电子迁移率

Abstract: Conduction band structure of silicon under uniaxial[110] stress is studied with two band k·p perturbation theory. Splitting energy of conduction band minima and electron effective mass as a function of stress and direction electron mobility in uniaxial stressed silicon are obtained with relax time approximate theory. Intervalley scattering, intravalley scattering, and ionized impurity scattering are considered in calculation. It is demonstrated that as uniaxial[110] stress is applied on silicon crystal, a significant anisotropy in electron mobility can be observed. Among crystal directions[001],[110], and[110], electron mobility along[110] direction under uniaxial[110] tensile stress has a profound enhancement, which increase from 1 450 cm²·Vs^-1 to 2 500 cm²·Vs^-1 as stress change from 0 to 2 GPa. Electron mobility enhancement is mainly due to uniaxial stress induced conduction effective mass reduction, while suppression of intervalley scattering plays a minor role.

Key words: uniaxial stressed silicon, conduction band structure, scattering, electron mobility

中图分类号:

TN432

马建立, 付志粉, 李洋, 唐旭东, 张鹤鸣. 单轴[110]应力硅电子迁移率[J]. 计算物理, 2017, 34(4): 483-488.

MA Jianli, FU Zhifen, LI Yang, TANG Xudong, ZHANG Heming. Electron Mobility in Silicon Under Uniaxial[110] Stress[J]. CHINESE JOURNAL OF COMPUTATIONAL PHYSICS, 2017, 34(4): 483-488.

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