介质中双缺陷电荷对碳纳米管场效应晶体管量子输运特性的影响

doi:10.19596/j.cnki.1001-246x.8054

计算物理 ›› 2020, Vol. 37 ›› Issue (3): 352-364.DOI: 10.19596/j.cnki.1001-246x.8054

介质中双缺陷电荷对碳纳米管场效应晶体管量子输运特性的影响

魏志超, 王能平

宁波大学物理科学与技术学院微电子科学与工程系, 浙江宁波 315211

收稿日期:2019-02-28 修回日期:2019-05-25 出版日期:2020-05-25 发布日期:2020-05-25
通讯作者: 王能平,男,研究员,研究方向为纳米线中的量子输运,E-mail:wangnengping@nbu.edu.cn
作者简介:魏志超,男,硕士研究生,研究方向为纳米线中的量子输运,E-mail:1518110070@qq.com
基金资助:
国家自然科学基金（61176081）资助项目

Quantum Transport in a Carbon Nanotube Transistor:Influence of Two Charged Defects in Dielectric

WEI Zhichao, WANG Nengping

Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo University, Ningbo, Zhejiang 315211, China

Received:2019-02-28 Revised:2019-05-25 Online:2020-05-25 Published:2020-05-25

摘要/Abstract

摘要： 用非平衡格林函数理论和紧束缚模型近似计算长沟道弹道输运p型碳纳米管场效应管中电流强度.研究当场效应管介质（SiO₂）中存在两个带电缺陷时，载流子散射所引起的电流强度减小和栅极阈值电压偏移量与缺陷位置的关系.介质中两个缺陷所带电荷Q₁=Q₂=+e（-e为电子电荷），都靠近源极或者都靠近漏极，或者一个电荷靠近源极另一个电荷靠近漏极.在工作状态下，所引起的电流强度相对减小比介质中只存在单个正电荷Q=+e且靠近源极（或漏极）时所引起的电流强度相对减小大得多.如果两个正电荷都在沟道中央附近，随着两个电荷的轴向距离减小，栅极阈值电压偏移的绝对值明显增加.栅极阈值电压偏移可达到-0.35 V.

关键词: 非平衡格林函数, 碳纳米管, 场效应管, 随机电报信号杂音

Abstract: Nonequilibrium Greens function method in a tight-binding approximation is used to calculate current through a carbon nanotube field-effect transistor (CNFET) with cylindrical gate electrode. Two individual defects in gate oxide (SiO₂) of a long channel p-type CNFET is investigated. It is found that the relative current reduction and the threshold voltage shift caused by two charged defects depend sensitively on positions of the charged defects. If the charges Q₁=Q₂=+e (where -e is electron charge) are both close to one of the two leads, or one is close to the source lead and the other is close to the drain lead, the relative current reduction in on-state is much greater than that due to a single positive charge Q=+e located close to one of the two leads. In this case, the threshold voltage shift due to two charges is negligible. If two positive charges are both around center of the channel, the relative current reduction in on-state caused by two charges is significantly greater than that caused by a single positive charge near center of the channel. Furthermore, the negative shift of threshold gate voltage increases with decreasing distance between two charges. And a great threshold voltage shift of -0.35 V may be caused.

Key words: nonequilibrium Greens function, carbon nanotube, field-effect transistor, random telegraph signals

中图分类号:

O469

魏志超, 王能平. 介质中双缺陷电荷对碳纳米管场效应晶体管量子输运特性的影响[J]. 计算物理, 2020, 37(3): 352-364.

WEI Zhichao, WANG Nengping. Quantum Transport in a Carbon Nanotube Transistor:Influence of Two Charged Defects in Dielectric[J]. CHINESE JOURNAL OF COMPUTATIONAL PHYSICS, 2020, 37(3): 352-364.

参考文献

[1] IIJIMA S. Helical microtubules of graphitic carbon[J]. Nature, 1991, 354(6348):56-58.
[2] MINTMIRE J W, DUNLAP B I, WHITE C T. Are fullerene tubules metallic?[J]. Physical Review Letters, 1992, 68(5):631-634.
[3] SANCHEZ-VALENCIA J R, DIENEL T, GRÖNING O, et al. Controlled synthesis of single-chirality carbon nanotubes[J]. Nature, 2014, 512(7512):61-64.
[4] WIND S J, APPENZELLER J, MARTEL R, et al. Vertical scaling of carbon nanotube field-effect transistors using top gate electrodes[J]. Applied Physics Letters, 2002, 80(20):3817-3819.
[5] JAVEY A, GUO J, WANG Q, et al. Ballistic carbon nanotube field-effect transistors[J]. Nature, 2003, 424(6949):654-657.
[6] ZHANG L, GU X, SONG R, et al. Ab-initial study on elastic properties of single wall carbon nanotubes[J]. Chinese Journal of Computational Physics, 2011, 28(5):781-785.
[7] ZHANG R, HOU S, CHOU Q. Parallel computing of first-principles based quantum transport simulations[J]. Chinese Journal of Computational Physics, 2015, 32(6):631-638.
[8] MA R, ZHANG H. Electronic properties of graphene nanoribbons doped with rhombus boron nitride segment[J] Chinese Journal of Computational Physics, 2019, 36(1):99-105.
[9] DIENES G J. Effects of nuclear radiations on the mechanical properties of solids[J]. Journal of Applied Physics, 1953, 24(6):666-674.
[10] DARTYGE E, DURAUD J P, LANGEVIN Y, et al. New model of nuclear particle tracks in dielectric minerals[J]. Physical Review B, 1981, 23(10):5213-5229.
[11] CHAN J, BURKE B, EVANS K, et al. Reversal of current blockade in nanotube-based field effect transistors through multiple trap correlations[J]. Physical Review B, 2009, 80(3):033402.
[12] LIU F, BAO M, KIM H, et al. Giant random telegraph signals in the carbon nanotubes as a single defect probe[J]. Applied Physics Letters, 2005, 86(16):163102
[13] LIU F, WANG K L. Correlated random telegraph signal and low-frequency noise in carbon nanotube transistors[J]. Nano Letters, 2008, 8(1):147-151.
[14] DUTTA P, HORN P M. Low-frequency fluctuations in solids:1/f noise[J]. Reviews of Modern Physics, 1981, 53(3):497-516.
[15] WEISSMAN M B. 1/f noise and other slow, nonexponential kinetics in condensed matter[J]. Reviews of Modern Physics, 1988, 60(2):537-571.
[16] LIN Y M, APPENZELLER J, KNOCH J, et al. Low-frequency current fluctuations in individual semiconducting single-wall carbon nanotubes[J]. Nano Letters, 2006, 6(5):930-936.
[17] LIU F, WANG K L, LI C, et al. Study of random telegraph signals in single-walled carbon nanotube field effect transistors[J]. IEEE Transactions on Nanotechnology, 2006, 5(5):441-445.
[18] HEINZE S, WANG N P, TERSOFF J. Electromigration forces on ions in carbon nanotubes[J]. Physical Review Letters, 2005, 95(18):186802.
[19] NEOPHYTOU N, KIENLE D, POLIZZI E, et al. Influence of defects on nanotube transistor performance[J]. Applied Physics Letters, 2006, 88(24):242106.
[20] WANG N P, HEINZE S, TERSOFF J. Random-telegraph-signal noise and device variability in ballistic nanotube transistors[J]. Nano Letters, 2007, 7(4):910-913.
[21] WANG N P, XU X J. Channel-length scaling for effects of single defects in carbon nanotube transistors[J]. Journal of Applied Physics, 2013, 114(7):073701.
[22] SORGENFREI S, CHIU C Y, GONZALEZ R L, et al. Label-free single-molecule detection of DNA-hybridization kinetics with a carbon nanotube field-effect transistor[J]. Nature Nanotechnology, 2011, 6(2):126-132.
[23] LÉONARD F, TERSOFF J. Multiple functionality in nanotube transistors[J]. Physical Review Letters, 2002, 88(25):258302.
[24] DATTA S. Electronic transport in mesoscopic systems[D]. Cambridge:Cambridge University Press, 1995.
[25] GUO J, DATTA S, LUNDSTROM M, ANANTRAM M P. Toward multiscale modeling of carbon nanotube transistors[J]. International Journal for Multiscale Computational Engineering, 2004, 2:257-277.
[26] BRANDBYGE M, MOZOS J-L, ORDEJÓN P, et al. Density-functional method for nonequilibrium electron transport[J]. Physical Review B, 2002, 65(16):165401.
[27] ROCHA A R, SANVITO S. Asymmetric I-V characteristics and magnetoresistance in magnetic point contacts[J]. Physical Review B, 2004, 70(9):094406.
[28] BVTTIKER M, IMRY Y, LANDAUER R, et al. Generalized many-channel conductance formula with application to small rings[J]. Physical Review B, 1985, 31(10):6207.
[29] MEIR Y, WINGREEN N S. Landauer formula for the current through an interacting electron region[J]. Physical Review Letters, 1992, 68(16):2512-2515.
[30] SVIZHENKO A, ANANTRAM M P, GOVINDAN T R, et al. Two-dimensional quantum mechanical modeling of nanotransistors[J]. Journal of Applied Physics, 2002, 91(4):2343.

介质中双缺陷电荷对碳纳米管场效应晶体管量子输运特性的影响

Quantum Transport in a Carbon Nanotube Transistor:Influence of Two Charged Defects in Dielectric

RichHTML

PDF

可视化

摘要/Abstract

引用本文

使用本文

参考文献

相关文章 14

编辑推荐

Metrics

作者中心

审稿中心

期刊浏览

期刊介绍

[1]	王雪梅, 董斌, 朱子亮, 杨俊升. 聚合物分子与官能化纳米管相互作用及扩散特性的分子动力学模拟[J]. 计算物理, 2020, 37(5): 589-594.
[2]	杨龙飞, 张业新, 都时禹. Matlab编程的Hückel分子轨道法计算研究掺杂纳米碳管的化学反应性[J]. 计算物理, 2017, 34(6): 685-696.
[3]	杨忠华, 刘贵立, 曲迎东, 李荣德. N掺杂碳纳米管环吸附Fe原子的第一性原理研究[J]. 计算物理, 2016, 33(3): 374-378.
[4]	王伟, 张露, 李娜, 杨晓, 张婷, 岳工舒. 欠叠异质栅纳米碳管场效应管的量子输运特性[J]. 计算物理, 2015, 32(2): 229-239.
[5]	王伟, 高健, 张婷, 张露, 李娜, 杨晓, 岳工舒. 三材料线性掺杂石墨烯纳米条带场效应管性能[J]. 计算物理, 2015, 32(1): 115-126.
[6]	柳福提, 程艳, 羊富彬, 程晓洪, 陈向荣. 硅纳米结点电子输运性质的计算[J]. 计算物理, 2013, 30(6): 943-948.
[7]	赵晓辉, 蔡理, 张鹏. 一种碳纳米管场效应管半经典模型计算方法[J]. 计算物理, 2012, 29(4): 575-579.
[8]	张立云, 顾学文, 宋荣利, 张娜. 基于第-性原理研究单壁碳纳米管的力学性质[J]. 计算物理, 2011, 28(5): 781-785.
[9]	苏伟, 董瑞新, 刘昊. 脱氧核苷酸横向电输运特性的理论计算[J]. 计算物理, 2010, 27(3): 439-445.
[10]	张霞, 董瑞新, 崔守鑫, 班戈, 李珂, 韩洪文. 银离子对DNA碱基对的横向电输运特性的影响[J]. 计算物理, 2009, 26(5): 767-772.
[11]	赵宏康, 王清. 环形碳纳米管-量子点耦合系统的介观输运[J]. 计算物理, 2005, 22(2): 149-154.
[12]	程锦荣, 袁兴红, 赵敏, 黄德财, 赵力, 张立波. 结构与尺寸对碳纳米管物理吸附储氢的影响[J]. 计算物理, 2005, 22(1): 70-76.
[13]	胡慧芳, 张丽芳, 汪小知, 梁君武. 拓扑缺陷的不同分布对单壁碳纳米管电学性能的影响[J]. 计算物理, 2004, 21(3): 369-372.
[14]	程锦荣, 闫红, 陈宇, 张立波, 赵力, 黄德财, 唐瑞华. 碳纳米管储氢性能的计算机模拟[J]. 计算物理, 2003, 20(3): 255-258.