[1] WAGER J F. Transparent electronics[J]. Science, 2003, 300:1245-1246. [2] LIU L, WANG S M, LI C, et al. Pure inorganic multi-color electrochromic thin films:Vanadium-substituted Dawson type polyoxometalate based electrochromic thin films with tunable colors from transparent to blue and purple[J]. J Mater Chem, 2015, 3:5175-5182. [3] TSAY C Y, HSU W T. Comparative studies on ultraviolet-light-derived photoresponse properties of ZnO, AZO, and GZO transparent semiconductor thin films[J]. Mater, 2017, 10:1379. [4] THIELERT B, JANOWITZ C, GALAZKA Z, et al. Theoretical and experimental investigation of the electronic properties of the wide band-gap transparent semiconductor MgGa2O4[J]. Phys Rev B, 2018, 97:235309. [5] JUN T, KIM J, SASASE M, et al. Material design of p-type transparent amorphous semiconductor, Cu-Sn-I[J]. Adv Mater, 2018, 30:1706573. [6] BABU S H, KALEEMULLA S, RAO N M, et al. Indium oxide:A transparent, conducting ferromagnetic semiconductor for spintronic applications[J]. J Magn Magn Mater, 2016, 416:66-74. [7] SINGH B, GHOSH S. Highly conducting gallium-doped ZnO thin film as transparent Schottky contact for organic-semiconductor-based Schottky diodes[J]. J Electr Mater, 2015, 44:2663-2669. [8] LANY S, ZUNGER A. Dopability, intrinsic conductivity, and nonstoichiometry of transparent conducting oxides[J]. Phys Rev Lett, 2007, 98:045501. [9] MIERITZ D G, RENAUD A, SEO D K. Unusual changes in electronic band-edge energies of the nanostructured transparent n-type semiconductor Zr-doped anatase TiO2 (Ti1-xZr<em>xO2; x<0.3)[J]. Inorg Chem, 2016, 55:6574-6585. [10] SANCHELA A V, WEI M, ZENSYO H, et al. Large thickness dependence of the carrier mobility in a transparent oxide semiconductor, La-doped BaSnO3[J]. Appl Phys Lett, 2018, 112:232102. [11] LIU A, ZHU H H, PARK W T, et al. Room-temperature solution-synthesized p-type copper(I) iodide semiconductors for transparent thin-film transistors and complementary electronics[J]. Adv Mater, 2018, 30:1802379. [12] BANERJEE A, CHATTOPADHYAY K. Recent developments in the emerging field of crystalline p-type transparent conducting oxide thin films[J]. Prog Cryst Growth Charact Mater, 2005, 50:52-105. [13] TONG B, ICHIMURA M. Electrochemical deposition of transparent p-type semiconductor NiO[J]. Electr Commun Jpn, 2018, 101:45-50. [14] KEHOE A B, SCANLON D O, WATSON G W. The electronic structure of sulvanite structured semiconductors Cu3MCh4 (M=V, Nb, Ta; Ch=S, Se, Te):Prospects for optoelectronic applications[J]. J Mater Chem C, 2015, 3:12236-12244. [15] KARS M, REBBAH A, REBBAH H. Cu3NbS4[J]. Acta Crystallogr E, 2005, 61:i180-i181. [16] DELGADO G E, CONTRERAS J E, MORAA J, et al. Structure refinement of the semiconducting compound Cu3TaS4 from X-ray powder diffraction data[J]. Acta Phys Pol A, 2011, 120:468-472. [17] TATE J, NEWHOUSE P, KYKYNESHI R, et al. Chalcogen-based transparent conductors[J]. Thin Solid Films, 2008, 516:5795-5799. [18] NEWHOUSE P, HERSH P, ZAKUTAYEV A, et al. Thin film preparation and characterization of wide band gap Cu3TaQ4 (Q=S or Se) p-type semiconductors[J]. Thin Solid Films, 2009, 517:2473-2476. [19] ARRIBART H, SAPOVAL B. Theory of mixed conduction due to cationic interstitials in the p-type semiconductor Cu3VS4[J]. Electrochim Acta, 1978, 24:751-754. [20] PETRITIS D, MARTINEZ G, LEVY-CLEMENT C, et al. Investigation of the vibronic properties of Cu3VS4, Cu3NbS4 and Cu3TaS4 compounds[J]. Phys Rev B, 1981, 23:6773. [21] MCKEOWN D A, MULLER I S, MATLACK K S, et al. X-ray absorption studies of vanadium valence and local environment in borosilicate waste glasses using vanadium sulfide, silicate, and oxide standards[J]. J Non-Crystal Solids, 2002, 298:160-175. [22] ESPINOSA-GARCÍA W F, RUIZ-TOBOÓN C M, OSORIO-GUILLÉN J M. The elastic and bonding properties of the sulvanite compounds:A first-principles study by local and semi-local functionals[J]. Physica B, 2001, 406:3788-3793. [23] KRESS G, FURTHMVLLER J. Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set[J]. Phys Rev B, 1996, 54:11169-11186. [24] PERDEW J P, RUZSINSZKY A, CSONKA G I, et al. Restoring the density-gradient expansion for exchange in solids and surfaces[J]. Phys Rev Lett, 2008, 100:136406. [25] KRESS G, JOUBERT D. From ultrasoft pseudopotentials to the projector augmented-wave method[J]. Phys Rev B, 1999, 59:1758-75. [26] MILMAN V, LEE M H, PAYNE M C. Ground-state properties of CoSi2 determined by a total-energy pseudopotential method[J]. Phys Rev B, 1994, 49:16300. [27] PAYNE M C, TETER M P, ALLAN D C, et al. Iterative minimization techniques for ab initio total energy calculations:Molecular dynamics and conjugate gradients[J]. Rev Mod Phys, 1992, 64:1045-1097. [28] KRESSE G, FURTHMULLERJ. Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set[J]. Phys Rev B, 1996, 54:11169-11186. [29] CHANTIS A N, CHRISTENSEN N E, SVANE A, et al. Full-zone analysis of relativistic spin splitting at band anticrossings:The case of zinc-blende semiconductors[J]. Phys Rev B, 2010, 81:205205. [30] PFROMMER B G, COTE M, LOUIE S G, et al. Relaxation of crystals with the quasi-Newton method[J]. J Comput Phys, 1997, 131:233-240. [31] SILVI B, SAVIN A. Classification of chemical bonds based on topological analysis of electron localization functions[J]. Nature, 1994, 371:683-686. [32] SEGALL M D, SHAH R, PICKARD C J, et al. Population analysis of plane-wave electronic structure calculations of bulk materials[J]. Phys Rev B, 1996, 54:16317-16320. [33] CRESSY G, HENDERSON C M B, VANDER LAAN G. Use of L-edge X-ray absorption spectroscopy to characterize multiple valence states of 3d transition metals:A new probe for mineralogical and geochemical research[J]. Phys Chem Miner, 1993, 20:111-119. [34] WANG W N, PEELAERS H, SHEN J X, et al. Carrier-induced absorption as a mechanism for electrochromism in tungsten trioxide[J]. MRS Communications, 2018, 8:926-931. [35] TANG Q F, LI H Z, WANG H Z, et al. Effects of process parameters on the electrochromic properties of WO3 films prepared by magnetron sputtering[J]. Advanced Ceramics, 2017, 38:142-149. |