CHINESE JOURNAL OF COMPUTATIONAL PHYSICS ›› 2000, Vol. 17 ›› Issue (S1): 121-125.DOI: 10.3969/j.issn.1001-246X.2000.01.021

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NUMERICAL SIMULATION OF SECONDARY ELECTRON BEHAVIOR NEAR THE SURFACE OF IRRADIATED CONDUCTOR

ZHOU Hui, CHENG Yin-hui, LI Bao-zhong, CHEN Yu-sheng   

  1. Northwest institute of nuclear technology, Xi'an, 710024, P R China
  • Received:1999-06-09 Revised:1999-09-27 Online:2000-12-25 Published:2000-12-25

Abstract: The finite difference and PIC method are used to simulate the behavior of secondary electrons stimulated by primary X-ray photoelectrons. The results are given for the air pressure below 1 Pa and the plasma effects of low energy secondary electrons to the irradiated conductor are discussed as well.

Key words: photoelectron, secondary electron, plasma, numerical simulation, finite difference

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