CHINESE JOURNAL OF COMPUTATIONAL PHYSICS ›› 1998, Vol. 15 ›› Issue (2): 165-170.

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CALCULATING POTENTIAL DISTRIBUTION OF TWO-DIMENSIONAL CURRENT FIELDS OF FOUR-POINT PROBE TECHNIQUE BY FEM

Shi Junshen1, Sun Yicai2   

  1. 1. Department of Physics, Yunnan Normal University, Kunmin 650092;
    2. Department of Electronic Engineering, Hebei Polytechnical University, Tiangjin 300130
  • Received:1996-10-04 Revised:1997-05-08 Online:1998-03-25 Published:1998-03-25

Abstract: The finite element method(FEM) is employed to calculate potential distributions of two-dimensional current fields in semiconductor sheet resistance measurements using a four-point probe and the model of calculation is presented, which has been tested and proved by calculating the potential distribution of several measurement shaped-samples. The FEM has characteristic of simpler and more common for any shape samples than the methods of electrical image and map transformation.

Key words: four-point probe, potential distribution, numerical calculation, FEM

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