Abstract: Based on physical mechanism of the interaction between incident neutrons and silicon atoms, a simulation program of Single Event Upset (SEU) induced by neutrons is compiled by Monte Carlo method. The process of SEU of a 16 K static access memory silicon chip induced by 14 MeV incident neutrons has been simulated by the program. The simulation results show that the program can provide a detailed description of the physical process of SEU of a silicon chip and can produce reference data about SEU cross section in a 14 MeV neutrons evironment.

Key words: Single Event Upset, Monte Carlo simulation, calculation program