CHINESE JOURNAL OF COMPUTATIONAL PHYSICS ›› 2000, Vol. 17 ›› Issue (S1): 77-81.DOI: 10.3969/j.issn.1001-246X.2000.01.014
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TANG Ben-qi, WANG Yian-ping, GEN Bin, CHEN Xiao-hua
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Abstract: A new model is established to perform simulation for Single-Event Gate-Rupture of power MOSFETs in use of PSPICE circuit simulation software. The application results have a very good agreement with the corresponding data in published articles.
Key words: power MOSFET, Single-Event Gate Rupture, circuit simulation
CLC Number:
TL99
TANG Ben-qi, WANG Yian-ping, GEN Bin, CHEN Xiao-hua. EQUIVALENT CIRCUITS SIMULATION FOR SINGLE EVENT GATE RUPTURE OF POWER MOSFETs[J]. CHINESE JOURNAL OF COMPUTATIONAL PHYSICS, 2000, 17(S1): 77-81.
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URL: http://www.cjcp.org.cn/EN/10.3969/j.issn.1001-246X.2000.01.014
http://www.cjcp.org.cn/EN/Y2000/V17/IS1/77
