The Coarse Dispersion of SiC/SiO2 Fractal Interface

CHINESE JOURNAL OF COMPUTATIONAL PHYSICS ›› 2004, Vol. 21 ›› Issue (4): 311-315.

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The Coarse Dispersion of SiC/SiO₂ Fractal Interface

CHEN Wen-jian, XIE Jia-chun, XU Jun, HU Lin-hui, DONG Xiao-bo

Physics Department, University of Science and Technology of China, Hefei 230026, China

Received:2003-06-03 Revised:2003-09-15 Online:2004-07-25 Published:2004-07-25

Abstract

Abstract: A fractal model of coarse surface of SiC by using structure function is presented.Three parameters rms roughness Δ,fractal dimension D,and correlative length L are used to describe the covariance function of surface height.The method calculating these parameters is also given.With the present model,one can calculate the coarse dispersion of SiC/SiO₂ fractal interface to channel electrons.

Key words: fractal, coarse interface dispersion, MOSFET, silicon carbide

CLC Number:

CHEN Wen-jian, XIE Jia-chun, XU Jun, HU Lin-hui, DONG Xiao-bo. The Coarse Dispersion of SiC/SiO₂ Fractal Interface[J]. CHINESE JOURNAL OF COMPUTATIONAL PHYSICS, 2004, 21(4): 311-315.

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The Coarse Dispersion of SiC/SiO₂ Fractal Interface

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