Abstract: With analysis of conduction band structure and isotropic relaxation time approximation, an analytical model for the electron Hall mobility and Hall scattering factor of n-type 6H-SiC is proposed. The impact of different scattering mechanisms on the low field electron transport in 6H-SiC is illustrated clearly. Three ellipsoidal and parabolic constant energy surfaces simplification are used. The calculated results are in good agreement with physical measurements.

Key words: 6H-SiC, electron Hall mobility, Hall scattering factor, analytical model