A Monte Carlo Simulation of Penetration Depth and Concentration Distribution for 200keV Vanadium Ions Implanted into Peanuts

CHINESE JOURNAL OF COMPUTATIONAL PHYSICS ›› 2006, Vol. 23 ›› Issue (6): 743-747.

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A Monte Carlo Simulation of Penetration Depth and Concentration Distribution for 200keV Vanadium Ions Implanted into Peanuts

WANG Lin-xiang¹, ZHU Heng-jiang¹, ZHANG Shi-feng², WANG Shi-heng²

1. Department of Physics, Xinjiang Normal University, Urumuqi 830054, China;
2. Department of Physics, Xinjiang University, Urumuqi 830046, China

Received:2005-06-30 Revised:2006-01-09 Online:2006-11-25 Published:2006-11-25

Abstract

Abstract: In one- and two- dimensional approximations,the penetration depth-concentration distribution for 200 keV vanadium ions implanted into peanuts is simulated using a Monte Carlo method.The calculation is in good agreement with experimental results.The depth-concentration distribution for nitrogen ions with low energy implanted into peanuts is calculated which can not be obtained with experiment.It provides a computational method for the depth-concentration distribution of ions with low energy implanted into seeds.

Key words: ion implantation, Monte-Carlo simulation, depth-concentration distribution

CLC Number:

WANG Lin-xiang, ZHU Heng-jiang, ZHANG Shi-feng, WANG Shi-heng. A Monte Carlo Simulation of Penetration Depth and Concentration Distribution for 200keV Vanadium Ions Implanted into Peanuts[J]. CHINESE JOURNAL OF COMPUTATIONAL PHYSICS, 2006, 23(6): 743-747.

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A Monte Carlo Simulation of Penetration Depth and Concentration Distribution for 200keV Vanadium Ions Implanted into Peanuts

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