GEANT4-Based Simulation on Shielding and Radiation Effects of SPE Protons in Semiconductors

CHINESE JOURNAL OF COMPUTATIONAL PHYSICS ›› 2009, Vol. 26 ›› Issue (4): 591-596.

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GEANT4-Based Simulation on Shielding and Radiation Effects of SPE Protons in Semiconductors

LU Wei^1,2, WANG Tongquan^1,3, WANG Shangwu¹, CHEN Dayi⁴, WANG Xinggong²

1. College of Photo-Electronic Science and Engineering, National University of Defense Technology, Changsha 410073, China;
2. Institute for Disease Control and Prevention, PLA, Beijing 100071, China;
3. Beijing Qinghe Building Zi 7, Beijing 100085, China;
4. Xichang Sateuite Launch Center, Xichang 615000, China

Received:2007-10-15 Revised:2008-09-23 Online:2009-07-25 Published:2009-07-25

Abstract

Abstract: We simulate radiation effects of solar cosmic protons on spacecraft and satellites with a Monte Carlo software GEANT4.Damage induced by proton irradiation and shielding of Al layer are calculated.Linear energy transfer and range in materials agree well with referenced data. Energy deposited in incident direction shows a Bragg curve and nonelastic interactions show important impact.In Si recoil atoms are mainly distributed along incident proton trajectory and isolated recoils distribute along lateral direction with lower concentration. Al shielding layer shows a shielding on high energetic protons.Shielding is hardly changed as layer thickness is larger than 10mm.On the contrary,secondary production increases obviously.

Key words: GEANT4, range, LET, recoil atoms

CLC Number:

O571.33

LU Wei, WANG Tongquan, WANG Shangwu, CHEN Dayi, WANG Xinggong. GEANT4-Based Simulation on Shielding and Radiation Effects of SPE Protons in Semiconductors[J]. CHINESE JOURNAL OF COMPUTATIONAL PHYSICS, 2009, 26(4): 591-596.

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GEANT4-Based Simulation on Shielding and Radiation Effects of SPE Protons in Semiconductors

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