CHINESE JOURNAL OF COMPUTATIONAL PHYSICS ›› 2020, Vol. 37 ›› Issue (4): 488-496.

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Electronic Structure and Electrochromic Property of Sulvanite Compounds: A First-principles Study

LI Lin1, SUN Yuxuan2, SUN Weifeng2   

  1. 1. Power Research Institute of Heilongjiang Electric Power Co. Ltd., State Grid Corporation, Harbin, Heilongjiang 150040, China;
    2. Key Laboratory of Engineering Dielectrics and Its Application, Ministry of Education, Heilongjiang Provincial Key Laboratory of Dielectric Engineering, School of Electrical and Electronic Engineering, Harbin University of Science and Technology, Harbin, Heilongjiang 150080, China
  • Received:2019-04-22 Revised:2019-08-10 Online:2020-07-25 Published:2020-07-25

Abstract: With first-principles pseudo-potential plane-wave method, crystal structures, electronic structures and optical properties of sulvanite compounds:Cu3VS4, Cu3NbS4 and Cu3TaS4 are calculated to investigate their electrical conductivity and electrochromic performance. They are potentially applied in solar cells and electrochromic devices as transparent semiconductors. Electronic structures indicate that the secompounds are indirect band-gap semiconductors, with conduction band minimum and valence band maximum located at X and R points, respectively, in Brillouin zone. Electronic states of conduction band minimum and valence band maximum are dominated by d-orbitals of Cu and Ⅴ-group elements, respectively. From band structure, atomic charge population analysis, electron localization function and optical adsorption/reflectivity spectrum it is suggested that these sulvanite compounds are polar covalent semiconductors with high charge transport mobility and extraordinary electrochromic characteristics. They could be applied to electrochromic devices.

Key words: sulvanite compound, electronic structure, electrochromic material, first-principles calculation

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