Chinese Journal of Computational Physics ›› 2021, Vol. 38 ›› Issue (3): 361-370.DOI: 10.19596/j.cnki.1001-246x.8245

• Research Reports • Previous Articles     Next Articles

Dynamics Modeling of Charged Defects in Si under B Ion Implantation

Pengdi LI1,2(), Jun LIU2,3, Qirong ZHENG2,3, Chuanguo ZHANG2,3, Yonggang LI2,3,*(), Yongsheng ZHANG2,3, Gaofeng ZHAO1,*(), Zhi ZENG2,3   

  1. 1. Institute for Computational Materials Science, Department of Physics, Henan University, Kaifeng, Henan 475004, China
    2. Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei, Anhui 230031, China
    3. Science Island Branch of Graduate School, University of Science and Technology of China, Hefei, Anhui 230031, China
  • Received:2020-06-22 Online:2021-05-25 Published:2021-09-30
  • Contact: Yonggang LI, Gaofeng ZHAO

Abstract:

To describe accurately the dynamic physical process and obtain quantitatively boron (B) spatial distribution as well as it's evolution behaviors in silicon (Si) under boron implantation, we built a multiscale dynamic model of charged defects. In the model, multiple microscopic processes of defects generation and evolution are comprehensively considered under B ion implantation, including charge states of defects and reactions among charged defects, evolution of B-interstitial clusters (BICs) and interactions between charged defects and carriers. The simulated B distribution is consistent with experiments. It shows that BICs dominate the depth distribution of B concentration and interstitial B (BI) makes B distribution extend into depth. Besides, considering charge states of defects, we correct diffusion coefficients of Si interstitials (I) and BI so that the behavior of B distribution can be described accurately. The model reveals real physical processes and micro-mechanisms in Si under B implantation, which demonstrates that BICs and real charge states of defects are the key in describing B distribution. It provides theoretical guidance for semiconductor device fabrication.

Key words: silicon, boron implantation, charged defects, dynamics modeling

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